Manufacturability of Chemical Vapor Deposition of Copper

Abstract

A reliable and reproducible copper deposition process using the chemical vapor deposition technique has been successfully developed using hexafluoroacetylacetone‐based precursors. Effects of various process conditions such as temperature, distance from the wafer to the shower head, liquid precursor flow, etc., have been studied. Low resistivity (<2 μΩ cm), high deposition rate (>200 nm/min), good adhesion, and good gap fill are routinely achieved. The quality copper film has <1% variation within 25 wafer batches for more than 500 wafers tested. The resulting copper deposition process is considered ready for integration into a manufacturing line.