Temperature Dependence of Silicon Nanophotonic Ring Resonator With a Polymeric Overlayer

Abstract

In this paper, we investigate the temperature dependence of a silicon-on-insulator-based silicon nanophotonic ring resonator covered with a polymeric overlayer. Temperature-dependent wavelength shift is measured to be as low as 5 pm/degC for the TM mode in a silicon ring resonator composed of a 500 times 220 nm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> channel waveguide. We also show through simulations and experiments that the temperature dependence can be reduced for the TE mode or for both the TE and TM modes by adjusting the mode volume of a silicon nanophotonic waveguide.