Japanese Journal of Applied Physics · 1989 · 30 citations · 4 references
Natural SciencesMaterials SciencePhysicsOptical MaterialsOptoelectronicsSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsOptoelectronic MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsEpitaxial Growth Of Wide-bandgap SemiconductorsHexagonal ArchitectureOptoelectronic PropertiesPhotoluminescencePhotoluminescence SpectroscopySemiconductor CrystallographyThermal ExpansionThermal Expansion Coefficient
We propose cubic Zn 1- x Cd x S epilayers lattice-matched to GaAs ( x ∼0.58) as a new candidate for short-wavelength optoelectronic applications. This material is expected to possess a wide bandgap corresponding to the blue-to-purple spectral region and a mismatch in the thermal expansion coefficient smaller than that of the ZnSSe/GaAs system (1/4 of the latter). The problem lay in whether we could obtain a cubic structure, since only a hexagonal structure has been prepared for ZnCdS. In this study, we report on the successful growth of a cubic material by organometallic vapor-phase epitaxy. The nearly lattice-matched epilayers ( x ≃0.50∼0.65) showed good crystallographic properties and strong blue or purple photoluminescence both at 4.2 K and at room temperature.
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P.J. Wright, B. Cockayne, A. Williams · Journal of Crystal Growth · 1985 · 23 citations
Natural Sciences, Materials Engineering, Materials Science +6
Hideo Tai, Shin-ichi Nakashima, Shigenori Hori · Journal of the Japan Institute of Metals and Materials · 1976 · 11 citations · Full text