Effects of band non-parabolicity on electron drift velocity in silicon above room temperature

Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering

Conyers Herring, Erich Vogt · Physical Review · 1956 · 1.3K citations

Relaxation Process, Engineering, Magnetic Resonance +18

Monte Carlo determination of electron transport properties in gallium arsenide

W. Ronald Fawcett, A. D. Boardman, S. K. Swain · Journal of Physics and Chemistry of Solids · 1970 · 853 citations

Engineering, Physics, Applied Physics +5

Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

P.R. Norton, T.T. Braggins, H. J. Levinstein · Physical review. B, Solid state · 1973 · 202 citations

Engineering, Silicon On Insulator, Intervalley Phonons +20

Negative differential mobility of electrons in germanium: A Monte Carlo calculation of the distribution function, drift velocity and carrier population in the (111) and (100) minima

W. Ronald Fawcett, E.G.S. Paige · Journal of Physics C Solid State Physics · 1971 · 77 citations

Engineering, Electron Diffraction, Negative Differential Mobility +17

Temperature dependence of hot electron drift velocity in silicon at high electric field

C.Y. Duh, J.L. Moll · Solid-State Electronics · 1968 · 55 citations

Semiconductor Technology, Electrical Engineering, Engineering +9