2004 · 23 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDc-dc ConversionDc-dc ConvertersShort-channel EffectsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesDc-dc Converter TopologiesPower MosfetsWide Bandgap Semiconductor Converters
ew trench MOSFET technology presented in this paper includes several major technological breakthroughs that significantly improved device performance in DC-DC converter applications. The figure of merit R*AA has reached as low as 12 mOhm.mm/sup 2/ for a 30 VN SyncFET and R*Qg is only 75 is only 75 mOhm.nC for a 30VN Control FET, one of the lowest reported.