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Electrically Rewritable Memory Cells from Poly(3‐hexylthiophene) Schottky Diodes
83
Citations
35
References
2005
Year
EngineeringInorganic SaltsSocial SciencesMemoryAdaptive MemoryMemory DevicesMemory DevicePolymer ChemistryMaterials Science±6 VElectrical EngineeringElectronic MemoryOrganic SemiconductorRewritable Memory CellsMemory ReliabilityFlexible ElectronicsPolymer ScienceApplied PhysicsRetention TimeSemiconductor Memory
Rewritable plastic memory cells are made from polythiophene doped with inorganic salts and a plasticizer. The memory can be written and erased at ±6 V (see Figure) and read out is non-destructive. The retention time at zero bias is on the order of several minutes.
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