Hole levels in InAs self-assembled quantum dots

Abstract

We measure the energy levels and charging spectra of holes in self-assembled InAs quantum dots using capacitance-voltage and polarized photoluminescence spectroscopy in high magnetic fields. The pronounced circular polarization of the optical emission, together with the optical selection rules for orbital and spin quantum numbers, allows us to separate the individual electron and hole levels. The magnetic field dependence of the single-particle hole energy levels can be understood by considering a spin-orbit coupled valence band and agrees well with the observed behavior of the charging peaks in the capacitance-voltage spectra.