Layout for polarization insensitive modulation in LiNbO/sub 3/ waveguides

A. Kaplan, Shlomo Ruschin

IEEE Journal of Selected Topics in Quantum Electronics · 2000 · 15 citations · 12 references

Concepts

Abstract

We present in this paper a new waveguide-electrode layout for electrooptical devices integrated in a Z-cut X-propagating lithium niobate crystal. Polarization independent operation is achieved in this structure by a combination of several factors: simultaneous utilization of three electrooptic coefficients (r/sub 33/ r/sub 31/ r/sub 22/), electrode shift with respect to waveguides, and consideration of a necessary insertion of a buffer layer. Phase and amplitude modulation schemes are described based on this configuration. The layout has advantages, when compared to other polarization-insensitive schemes, in terms of lower voltage length and absence of polarization conversion.

References

12