Tailoring Exciton Dynamics by Elastic Strain‐Gradient in Semiconductors

Abstract

In purely bent ZnO microwires, the excitons can be effectively driven and concentrated by the elastic strain-gradient towards the tensile outer side of the purely bent wire. Experimental and theoretical approaches are combined to investigate the dynamics of excitons in an inhomogeneous strain field with a uniform elastic strain-gradient. Cathodoluminescence spectroscopy analysis on purely bent ZnO microwires verifies that excitons can be effectively driven and concentrated along the elastic strain-gradient.