Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks

H. Eisele · Solid-State Electronics · 1989 · 59 citations

Electrical Engineering, Engineering, Rf Semiconductor +8

High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz

Anders Rydberg · IEEE Electron Device Letters · 1990 · 53 citations

Electrical Engineering, Engineering, Radio Frequency +14

High-performance second-harmonic operation W-band GaAs Gunn diodes

Shih-Chieh Teng, R.E. Goldwasser · IEEE Electron Device Letters · 1989 · 53 citations

75-110 Ghz, Electrical Engineering, Engineering +10

D-band (110–170 GHz) InP gunn devices

Ridha Kamoua, H. Eisele, G.I. Haddad · Solid-State Electronics · 1993 · 44 citations · Full text

Inp Gunn Devices, Electrical Engineering, Engineering +4

GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

H. Eisele, G.I. Haddad · Electronics Letters · 1992 · 28 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +14