Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing

Abstract

Characteristics have been investigated for both KrF excimer-laser light and KrF excimer-laser crystallization of Si thin films. The results were applied to design an optical system for growing densely packed and large grains. A high-resolution beam profiler confirmed that the laser light intensity distribution on the sample surface had a nearly ideal triangular form with a maximum-to-minimum intensity ratio of approximately 2, as designed. This distribution could grow 5-µm-long grains with a packing efficiency close to 100% by a single laser light pulse.