5.2-GHz bandwidth monolithic GaAs optoelectronic receiver

Abstract

A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50- Omega output buffer stage has been fabricated using an enhancement/depletion 0.35- mu m recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal photodetector has a dark current of 0.8 nA, a responsivity of 0.2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5.2 GHz with an effective transimpedance of 300 Omega into a 50- Omega load, which corresponds to a transimpedance bandwidth product of 1.5 THz- Omega .< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>