Europhysics Letters (EPL) · 2014 · 23 citations · 29 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryMaterials PhysicsElectronic Material CharacterizationMetalsOxide SemiconductorsStrain EngineeringBand GapBand Gap PredictionBand Gap TuningDirect Band GapRange-separated FunctionalStrain EffectsStrain Effects On Electronic PropertiesStrain-induced Transformation
Structural transformations and electronic structures of (0001) BeO, MgTe, CdS and 2H-SiC films under equibiaxial in-plane strains are studied using the HSE06 range-separated hybrid functionals. The main results are summarized as follows: I) The structural transition from the polar wurtzite to the nonpolar graphite-like phase is predicted for BeO, MgTe and CdS but not for 2H-SiC, which is more covalent in nature. II) Either a direct or an indirect band structure is displayed in wurtzite BeO and 2H-SiC based on the values of strain, while only a direct band gap is displayed in wurtzite MgTe and CdS. At large tensile strains, the band gaps of graphite-like BeO and CdS are always indirect, whereas the graphite-like MgTe undergoes a direct-to-indirect band gap transition. Furthermore, the decrease in band gap is observed for both types of strain, thereby enabling a number of important technological applications.
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Generalized Gradient Approximation Made Simple
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