2002 · 11 citations · 1 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesAnalog Integrated CircuitsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignLow-noise Circuit DesignRadio-frequency Integrated CircuitsCmos Analog Integrated CircuitsDynamic RangeGainInsertion LossLow-noise AmplifiersNoise FigureRadio-frequency Integrated Circuit DesignRf Cmos Design
This paper reports on a low voltage, low noise, high linearity amplifier with on-chip bypass switch to provide extended dynamic range. The amplifier is designed for the wide dynamic range requirements of cellular band CDMA handsets. In high gain mode, the amplifier achieves 16.5 dB gain, 1.5 dB noise figure and 0 dBm input IP3 with just 10 mA of current from a 2.7 V supply. In bypass mode, the input IP3 increases to +27 dBm with <5 dB insertion loss and <100 /spl mu/A of DC current. This patented M/A-COM topology switched-LNA is fabricated on M/A-COM's 0.5 /spl mu/m low noise MESFET process and packaged in a low cost 8 lead MSOP plastic package.
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Ultra-low DC power GaAs HBT S-band low noise amplifiers
K.W. Kobayashi, A.K. Oki, L.T. Tran et al. · 2002 · 12 citations