A 16Mb MRAM with FORK Wiring Scheme and Burst Modes

Abstract

A 16Mb MRAM based on 0.13mum CMOS and 0.24mum MRAM process achieves a 34ns asynchronous access and 100MHz synchronous operation, compatible with pseudo-SRAM for mobile applications. By implementation of FORK wiring scheme, the cell efficiency is raised to 39.9% and the disturb robustness of half-selection state is improved