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GeSn Film Deposition Using Metal Organic Chemical Vapor Deposition
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2013
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Materials ScienceCmos ChannelChemical EngineeringEngineeringOrganic ElectronicsNanoelectronicsSurface ScienceApplied PhysicsOrganic SemiconductorChemistryChemical DepositionMicroelectronicsBeyond CmosMocvd TechniqueChemical Vapor DepositionThin Film ProcessingLsi Performance
An approach of creating CMOS channel with GeSn is one of the post-scaling techniques and is widely considered to be promising to improve LSI performance. In this paper, we selected the metal-organic (MO) precursors to deposit GeSn and investigated their characteristics. We confirmed that it is possible to deposit GeSn on a substrate using the MOCVD technique.