IEEE Electron Device Letters · 1984 · 132 citations · 2 references
EngineeringElectrical EngineeringLow-power DesignPower ElectronicsSemiconductor DevicesDiode CircuitsLeakage Power ReductionCurrent-source RectifiersDiode RectifiersJunction Leakage CurrentRectifying ContactsSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky Contacts
A new concept for reducing the forward voltage drop of Schottky rectifiers without incurring excessive reverse leakage currents is introduced. In this concept, a junction grid is incorporated beneath the Schottky barrier to pinch off current flow during reverse blocking. Experimental results that demonstrate the capability to reduce the forward drop from 0.6 to 0.4 V without incurring an increase in leakage current are presented.
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The physics of semiconductor devices
R. H. Rediker · Solid-State Electronics · 1970 · 1.6K citations