Progress in Photovoltaics Research and Applications · 2008 · 2K citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Device MaterialsSemiconductor Thin FilmsSolar Cell MaterialsSolar CellsDevice EfficiencyFill FactorNanostructured Solar CellsPhotovoltaic EfficiencyPhotovoltaic Performance AnalysisSolar Cell CharacterizationSurface TerminationThin-film Solar Cells
The study presents growth conditions, device analysis, and basic film characterization of the ZnO/CdS/CuInGaSe₂ solar cell. The cell was fabricated via a three‑stage co‑evaporation process with a modified surface termination. The device achieved a record 19.9 % total‑area efficiency, driven by an 81.2 % fill factor. Published in 2008 by John Wiley & Sons, Ltd.
Abstract We report a new record total‐area efficiency of 19·9% for CuInGaSe 2 ‐based thin‐film solar cells. Improved performance is due to higher fill factor. The device was made by three‐stage co‐evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented. Published in 2008 by John Wiley & Sons, Ltd.
13
Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2
D. Schmid, M. Ruckh, F. Grünwald et al. · Journal of Applied Physics · 1993 · 613 citations
Natural Sciences, Materials Engineering, Materials Science +17
Diode quality factor determination for thin-film solar cells
James R. Sites, P.H. Mauk · Solar Cells · 1989 · 274 citations