Dynamical aspect of Cl2 reaction on Si surfaces

Abstract

The sticking process of Cl2 on the Si(100) surfaces has been studied by employing a molecular-beam method. Initial sticking probabilities, S0, were measured as a function of the incident energy, Ei, and the surface temperature, Ts. The S0 versus Ei as well as S0 versus Ts curves were analyzed with a kinetic model, which includes both a direct sticking channel and a precursor-mediated sticking channel. The physisorption lifetimes were measured as a function of Ts to evaluate the depth of the physisorption well and the preexponential factor for the detrapping rate. The potential structure and the intermediate transition state relevant to the Cl2 sticking on the Si(100) surface were discussed.