Journal of Lightwave Technology · 1988 · 265 citations · 82 references
EngineeringElectrical EngineeringPhysicsOpticsOptoelectronicsSemiconductor MaterialsIntegrated OpticsOptical InterconnectsOptical ModulatorsOptical Signal ProcessingOptoelectronic DevicesOptoelectronic MaterialsActive Photonic ComponentsElectro-optic ModulatorsElectroabsorption ModulatorsOptical TransmissionOptical Transmission SystemsOptoelectronic PropertiesQuantum Well ModulatorsSemiconductor Optical Modulators
Because the electroabsorption effect in semiconductor multiple quantum well material is approximately 50 times larger than in bulk semiconductors, significant interest has been generated in the use of MQW's in optical modulators. Small high-speed devices have been made which show promise for external modulators in optical transmission systems, as well as for encoding and processing components in optical interconnect and signal processing systems. The fact that these modulators are made from III-V semiconductors had led to interest in integration of these components with other active optoelectronic components. Although most devices have operated with light of a wavelength of 0.85 mu m, recently much progress has been made in applying this technology to devices operating near 1.55 mu m. The author reviews the work of the last few years in this field and indicates some future directions.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Matthew Adams · IEEE Journal of Quantum Electronics · 1984 · 2.4K citations
Theory of the linewidth of semiconductor lasers
C. H. Henry · IEEE Journal of Quantum Electronics · 1982 · 2.4K citations