Journal of Materials Chemistry · 2011 · 62 citations · 23 references
Materials ScienceIi-vi SemiconductorElectrical EngineeringInsb NanowiresSize ConfinementEngineeringNanoelectronicsNanotechnologyApplied PhysicsZinc-blende Crystal StructureField Effect TransistorNanostructure SynthesisNanoscale ScienceOptoelectronicsSemiconductor DeviceSemiconductor Nanostructures
InSb nanowires with zinc-blende crystal structure and precise stoichiometry are synthesized via pulsed-laser chemical vapor deposition. Raman spectroscopy shows Stokes and anti-Stokes peaks of transverse-optical mode with asymmetric broadening. The nanowire demonstrates n-type semiconductor behavior. Enhanced surface scattering due to size confinement leads to reduced electron mobility.
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Single- and multi-wall carbon nanotube field-effect transistors
Richard Martel, Thomas Schmidt, Herbert Shea et al. · Applied Physics Letters · 1998 · 2.8K citations · Full text
Engineering, Field-effect Transistors, Carbon Nanotechnology +16
Ruoxue Yan, Daniel J. Gargas, Peidong Yang · Nature Photonics · 2009 · 1.6K citations
Uncooled high-speed InSb field-effect transistors
T. Ashley, A. B. Dean, C.T. Elliott et al. · Applied Physics Letters · 1995 · 106 citations
Electrical Engineering, Insb Enhancement-mode, Engineering +12