Multilayer MMIC using a 3 mu m*3-layer dielectric film structure

Abstract

Very small multilayer MMICs (monolithic microwave integrated circuits) using miniature microstrip lines on a thin dielectric film are described. Their configuration, loss characteristic, and dielectric materials (silicon oxynitride and polyinide) are discussed. Other effective thin-film transmission lines, line crossovers, and vertical connections are also discussed. Multiport Wilkinson dividers, 90 degrees and 180 degrees hybrids, and distributed amplifiers are implemented in an area of less than 1 mm/sup 2/.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>