Enhanced damage in bipolar devices at low dose rates: effects at very low dose rates

Abstract

The effect of very low dose rate irradiation is investigated for several linear bipolar devices that are sensitive to enhanced low dose-rate damage, including one device with super-/spl beta/ input transistors. New results are included at 0.001 and 0.002 rad(Si)/s. Irradiations at elevated temperature at high dose rate are compared with room temperature irradiation at very low dose rate. Possible mechanisms for enhanced damage are discussed.