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Assembly of Sub-10-nm Block Copolymer Patterns with Mixed Morphology and Period Using Electron Irradiation and Solvent Annealing
111
Citations
30
References
2011
Year
EngineeringPattern TransferNanostructured PolymerChemistryBlock CopolymerPolymersBlock Copolymer LithographyPolymer MaterialMacromolecular EngineeringBeam LithographyBlock CopolymersMaterials FabricationSolvent AnnealingNanolithographyPolymer ChemistryNanolithography MethodMaterials ScienceNanomanufacturingMixed MorphologyPattern FormationBlock Co-polymersNanomaterialsSelf-assemblyPolymer ScienceApplied PhysicsNanofabricationPolymer Self-assembly
Block copolymer self-assembly generates patterns with periodicity in the ∼10-100 nm range and is increasingly recognized as a route to lithographic patterning beyond the resolution of photolithography. Block copolymers naturally produce periodic patterns with a morphology and length-scale determined by the molecular architecture, and considerable research has been carried out to extend the range of patterns that can be produced from a given block copolymer, but the ability to control the period of the pattern over a wide range and to achieve complex structures with mixed morphologies from a given block copolymer is limited. Here we show how patterns consisting of coexisting sub-10-nm spheres and cylinders and sphere patterns with a range of periods can be created using a combination of serial solvent anneal processes and electron-beam irradiation of selected areas of a film of poly(styrene-block-dimethylsiloxane). These techniques extend the capabilities of block copolymer lithography, enabling complex aperiodic nanoscale patterns to be formed from a single block copolymer thin film.
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