A 1/4-inch 380 k pixel IT-CCD image sensor employing gate-assisted punchthrough read-out mode

Abstract

A newly developed 1/4-inch 380 k pixel IT-CCD image sensor features a novel cell structure in which signal charges are read out from a photodiode (PD) to a vertical-CCD (V-CCD) in a gate-assisted punchthrough mode. The cell structure, fabricated through the use of high energy ion implantation technology, enables both deep PD formation and transfer-gate (TG)/channel-stop (CS) length reduction. Deep PD formation helps increase sensitivity per PD unit area, and TG/CS length reduction widens both PD and V-CCD areas. Although the cell size is small (4.8 /spl mu/m (H)/spl times/5.6 /spl mu/m (V)), the sensor achieves both high sensitivity (35 mV/lx) and a high saturation signal (600 mV).< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>