Electronics Letters · 1997 · 156 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesLaser DiodesOptical SourcesOxide SemiconductorsSemiconductor Device MaterialsSemiconductor LasersHigh-power Laser DiodesHigh-power Semiconductor LasersMaximum Power OutputPower OutputSemiconductor Laser DiodesSingle-mode OperationSingle-mode Semiconductor LasersVertical-cavity Surface-emitting Lasers
The authors have optimised MBE-grown GaAs VCSELs emitting at a wavelength of 840 nm for maximum singlemode output power. Devices of 3.5 µm diameter show a record high singlemode CW output power of 4.8 mW and a butt-coupling efficiency into singlemode fibre of > 80%.
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57% wallplug efficiency oxide-confined 850 nm wavelengthGaAs VCSELs
R. Jäger, M. Grabherr, Christian Jung et al. · Electronics Letters · 1997 · 171 citations