Fabrication of A-Si:H Solar cells on high haze SnO<inf>2</inf>:F thin films

Abstract

In this work we report on the properties of amorphous silicon (a-Si:H) p-i-n solar cells fabricated on glass substrates covered with extremely high haze fluorinedoped tin oxide (SnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> :F) transparent conductive oxide (TCO) thin films, HU-TCO. The HU-TCO shows high haze value thorough the whole optical region where a-Si:H and microcrystalline silicon (μc-Si:H) solar cells are sensitive. We demonstrate here that open-circuit voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf> ) and fill factor (FF) of a-Si:H solar cells fabricated on HU-TCOs does not decrease significantly compared to the cells on conventional pyramidal texture TCOs. We also demonstrate here that V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf> and FF of a-Si:H solar cells depend on not only surface morphology of TCOs, but also strongly depend on thickness and deposition conditions of the solar cells.