Publication | Closed Access
Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations
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Citations
15
References
2005
Year
Electrical EngineeringSimulation AnalysisEngineeringIon ImplantationPhysicsFully-depleted Soi TechnologiesBias Temperature InstabilityNumerical SimulationApplied PhysicsBipolar AmplificationIon BeamIon EmissionMicroelectronicsHeavy IonsSemiconductor Device
The sensitivity to heavy ions of a 0.25 /spl mu/m fully-depleted SOI n-channel transistor is evaluated by numerical simulation. The variation of the bipolar gain versus LET and particle location in the structure is thoroughly investigated.
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