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A light-transmitting two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFT's integrated on a transparent substrate
11
Citations
5
References
1994
Year
A-si Pin PhotodiodesEngineeringPoly-si TftOptoelectronic DevicesIntegrated CircuitsFiber OpticsImage SensorPhotodetectorsOptical PropertiesOptical SwitchingPhotonic Integrated CircuitOptical CommunicationOptical SystemsIncident Optical BeamPhotonicsElectrical EngineeringPhotoelectric MeasurementPhotonic DeviceOptical SensorsPhotodetector ArrayAmorphous SiliconTransparent SubstrateOptoelectronicsOptical Devices
A light-transmitting two-dimensional photodetector array (32/spl times/32 cells) using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) thin film transistors (TFT's) integrated on a transparent substrate has been developed for use in a free-space optical switching network. The fabrication and the characteristics of the photodetector array are discussed. With driving circuits and sensing amplifiers, this photodetector array shows a minimum detectable power of /spl minus/25 dBm and an insertion loss of 0.4 dB for an incident optical beam with a diameter of 550 /spl mu/m. By monitoring the positions and the states of input optical beams, this photodetector array can be used to control the optical paths in photonic switching systems, such as a 1024-input-port optical concentrator.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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