Radiation-hard design for SOI MOS inverters

Abstract

The total-dose hardness of MOS integrated circuits is usually improved by increasing the hardness of the individual transistors. In this paper, we propose circuit design techniques that can further decrease the sensitivity of cells to radiation dose. This concept is applied to simple cells (inverters) produced in both thin-film SOI and gate-all-around technologies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>