Raman scattering and photoluminescence studies on Cu<inf>2</inf>O

Abstract

Cuprous oxide (Cu <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O) crystals were grown by the two step crystallization method in air atmosphere conditions from polycrystalline copper plates. The method comprises two stages; in the first one the copper plates are oxidized at 1020°C by some hours in line with its initial thickness. In the second stage the growth of large crystalline areas is promoted by annealing the Cu <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O samples at 1100°C for long periods. The effects on the crystalline structure and photoluminescence (PL) response were studied as a function of the conditions used in the second stage of the synthesis method. Raman scattering an X-ray measurements demonstrates the existence of the single phase Cu <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O. PL spectra were taken from 10 to 180K to define the main radiative recombination paths. Besides of the near band excitonic transitions, two strong emission bands at 720 and 920 nm associated with relaxed excitons at oxygen and copper vacancies were detected. Both excitonic-vacancy bond transitions presented similar intensities which can be associated with the preparation method. The PL and the Raman scattering measurements were used to assess the evolution of the crystalline quality.