Theoretical model of superconducting spintronic SIsFS devices

Abstract

Motivated by recent progress in the development of cryogenic memory compatible with single flux quantum (SFQ) circuits, we have performed a theoretical study of magnetic SIsFS Josephson junctions, where “S” is a bulk superconductor, “s” is a thin superconducting film, “F” is a metallic ferromagnet, and “I” is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature, and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current IC and a normal-state resistance RN in the π state, comparable to that in superconductor–insulator–superconductor tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlOx-Nb-Pd0.99Fe0.01-Nb junctions.