Solution-Processed Indium–Zinc-Oxide Thin Film Transistors With High-$k$ Magnesium Titanium Oxide Dielectric

Abstract

In this letter, magnesium-titanium oxide (MTO) thin films were prepared through a solution-processing method. Variation of permittivity, leakage properties, and optical bandgap of the MTO thin films with different Ti content were investigated. The amorphous indium-zinc oxide thin-film transistors (TFTs) using Mg <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.6</sub> Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.4</sub> O as gate dielectric exhibited a small subthreshold swing of 0.32 V/decade, moderate field-effect mobility of 3.41 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, low threshold voltage of -0.9 V, and large ON/OFF current ratio of ~ 6×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> . These results demonstrate the potential application of solution-processed MTO thin films as a promising gate dielectric layer in oxide-TFTs.