Silicon Micromachined W-Band Bandpass Filter Using DRIE Technique

Abstract

A silicon micromachined W-band 3-pole bandpass filter using deep reactive ion etching technology with stacked silicon substrates is presented for the first time. The dimensions of the waveguide filter are calculated based on EM theory and optimized using the Ansoft HFSS 9.2 full wave simulator. The measured center frequency is 92.45GHz. The passband insertion loss is between 1.1 dB and 1.3 dB. The measured bandwidth is 4.83%. The attenuation is more than 30dB at 9GHz away from the center frequency