Low-voltage high-gain resonant-cavity avalanche photodiode

Abstract

For p-i-n photodiodes and avalanche photodiodes (APDs) in the low-gain regime, there is a performance tradeoff between the transit-time contribution to the bandwidth and the quantum efficiency. A new photodetector structure is demonstrated that alleviates limitations imposed by this tradeoff. This structure utilizes a thin ( approximately=900 AA) depleted absorbing layer to reduce the transit time and achieve avalanche gain at low bias voltage (V/sub b/ approximately=9 V). The external quantum efficiency has been enhanced ( eta /sub e/>49%) by incorporating the structure into a resonant cavity.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>