SEU immunity: The effects of scaling on the peripheral circuits of SRAMs

Abstract

Heavy ion testing on a scaled 256 K SRAM has shown that SEU analysis of the peripheral circuits as well as the memory cell must be performed as circuits are scaled to smaller and smaller dimensions. This paper describes the SEU, induced phenomena experienced by the scaled version of a previous 256 K radiation hardened SRAM design, affected by circuits in the periphery.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>