Advanced Functional Materials · 2011 · 314 citations · 61 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsOptoelectronicsOptoelectronic MaterialsPhotodetectorsSemiconductor NanomaterialsUltraviolet DetectorsHydrothermal ProcessingHydrothermal TreatmentOptoelectronic PropertiesPhotocurrent GenerationPhotodetectionPhotodetector MaterialsSelectivityUltraviolet Photodetectors
UV‑A (320–400 nm) reaches the earth’s surface and prolonged exposure can cause skin cancer, making effective monitoring of this radiation essential. We present the first high‑performance UV photodetector fabricated from an individual Nb₂O₅ nanobelt. Quasi‑aligned Nb₂O₅ nanobelts (100–500 nm wide, 2–10 µm long) were synthesized by hydrothermal treatment of niobium foil in KOH, followed by proton exchange and calcination, and a nanostructured photodetector was assembled from a single nanobelt to evaluate its optoelectronic properties. The device exhibits linear photocurrent, excellent UV‑A selectivity, a record external quantum efficiency of 6070 %, stable photocurrent over 2500 s at 1 V, and its performance is further enhanced by improved crystallinity and defect elimination, confirming Nb₂O₅ nanobelts as suitable for UV‑A sensors and optoelectronic circuits.
Abstract Although human eyes are quite insensitive to ultraviolet (UV) light, most of the longer wavelength UV light (the UV‐A band between 320 and 400 nm) does reach the earth surface and after prolonged exposure, the radiation can cause health concerns especially skin cancer. Therefore, it is extremely important to explore ways to effectively monitor the radiation. Herein we report for the first time a new high‐performance UV photodetector made of an individual Nb 2 O 5 nanobelt. Quasi‐aligned Nb 2 O 5 nanobelts 100–500 nm wide and 2–10 μm long were synthesized using a hydrothermal treatment of a niobium foil in a KOH solution followed by proton exchange and calcination treatment. A nanostructured photodetector was constructed from an individual Nb 2 O 5 nanobelt and its optoelectronic properties were evaluated. The detector exhibited linear photocurrent characteristics, excellent light selectivity, and high external quantum‐efficiency (EQE) of 6070%. Long‐term stability of the photocurrent over a period of 2500 s at an applied voltage of 1.0 V was achieved. The photodetector performance was further enhanced by improving the crystallinity and eliminating the defects in the Nb 2 O 5 nanobelt crystals. These excellent optoelectronic properties demonstrate that Nb 2 O 5 nanobelts are suitable for visible‐blind UV‐light sensors and optoelectronic circuits, especially those operating in the UV‐A range.
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