Gallium Nitride Nanowire Nanodevices

TLDR

Field effect transistors based on individual GaN nanowires have been fabricated. The study assembles high‑yield p‑n junctions from p‑type Si and n‑type GaN nanowires to explore their potential applications. Gate‑dependent transport shows the GaN nanowires are n‑type, with conductance modulated over three orders of magnitude and electron mobilities up to 650 cm²/V·s, comparable to or exceeding thin‑film materials, indicating high‑quality building blocks for nanoscale electronics.

Abstract

Field effect transistors (FETs) based on individual GaN nanowires (NWs) have been fabricated. Gate-dependent electrical transport measurements show that the GaN NWs are n-type and that the conductance of NW−FETs can be modulated by more than 3 orders of magnitude. Electron mobilities determined for the GaN NW FETs, which were estimated from the transconductance, were as high as 650 cm2/V·s. These mobilities are comparable to or larger than thin film materials with similar carrier concentration and thus demonstrate the high quality of these NW building blocks and their potential for nanoscale electronics. In addition, p−n junctions have been assembled in high yield from p-type Si, and these n-type GaN NWs and their potential applications are discussed.