Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory

Abstract

This article investigates the carrier transport phenomenon and multilevel switching mechanism of -based resistive random access memory (RRAM) with structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of and are 0.7 and , respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the layer.