IEEE Transactions on Electron Devices · 2011 · 55 citations · 25 references
EngineeringElectron-beam LithographyOrganic ElectronicsAnalog DesignDual Threshold VoltageIntegrated CircuitsElectronic DevicesBeam LithographyMixed-signal Integrated CircuitElectrical EngineeringOrganic SemiconductorComputer EngineeringP-channel Organic TechnologyMicroelectronicsOrganic MaterialsDigital OrganicElectronic CircuitsElectronic MaterialsFlexible ElectronicsApplied PhysicsDigital Circuit DesignOptoelectronics3D Integration
Analog & digital circuits implemented in a dual threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) p-channel organic technology are presented. The dual V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> organic technology is compatible with large-area and mechanically flexible substrates due to its low processing temperature (≤ 95°C) and scalable patterning techniques. We demonstrate the first analog & digital organic integrated circuits produced by a dual-gate metal process. The analog circuits are powered by a 5-V supply and include a differential amplifier and a two-stage uncompensated operational amplifier (op-amp). A dynamic comparator is measured to have an input offset voltage of 200 mV and latching time of 119 ms. Both the comparator and the op-amp dissipate 5 nW or less. Area-minimized digital logic is presented. Inverters powered by a 3-V supply were measured to have positive noise margins and consumed picowatts of power. An 11-stage ring oscillator, also powered by a 3-V supply, swings near rail to rail at 1.7 Hz. These results demonstrate dual threshold voltage process feasibility for large-area flexible mixed-signal organic integrated circuits.
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