IEEE Electron Device Letters · 2005 · 30 citations · 4 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignElectrostatic Discharge ProtectionBicmos TechnologyCapacitanceParasitic CapacitanceParasitic Capacitance ReductionPolysiliconSige Bicmos DesignSilicon Controlled Rectifier Protection Structures
Robust low-parasitic electrostatic discharge (ESD) protection is highly desirable for RF ICs. This letter reports design of a new low-parasitic polysilicon silicon controlled rectifier (SCR) ESD protection structure designed and implemented in a commercial 0.35-μm SiGe BiCMOS technology. The concept was verified by simulation and experiment with the results showing that the new structure has much lower parasitic capacitance (C/sub ESD/) and higher F-factor than that of other ESD protection devices. A small polysilicon SCR structure of 750-μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> all-inclusive provides a high human body model ESD protection of 3.2 kV while featuring a high F-factor of /spl sim/42 and a low C/sub ESD/ of /spl sim/92.3 fF. The new polysilicon SCR ESD protection structure seems to be an attractive solution to high-GHz RF ICs.
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