Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density field-programmable gate arrays

Abstract

The reliability of a new amorphous silicon/dielectric antifuse is characterized and modeled. Unprogrammed antifuse leakage and time-to-breakdown are functions not only of applied voltage but also of stressing polarity and temperature. Both breakdown and leakage criteria are used to investigate their effects on time-to-fail. A thermal model incorporates the effects of programming and stress currents, ambient temperature, and variation of antifuse resistance with temperature. The measured temperature dependence of antifuse resistance is used for the first time to derive key physical parameters in the model.