Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 53 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceSemiconductor MaterialsSurface ScienceThin FilmsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor NanomaterialsSemiconductor PhysicsSemiconductor SurfacesSilicon MaterialsAntiphase BoundariesMolecular Beam EpitaxySiliconSilicon EpitaxySilicon NanostructuresSilicon Surface ScienceStep-flow GrowthSubstrate Orientation Effects
Initial stages of Si molecular beam epitaxy (MBE) on Si(001) substrates, misoriented 0.5° towards [110], were investigated using scanning tunneling microscopy (STM). Images from samples grown at 750 K and subsequently quenched to room temperature indicate that after deposition of more than about 0.5 monolayers both step flow and island growth occur. The islands have an anisotropic shape while in-between islands antiphase boundaries can be seen.