34.2: 2.2 Inch qqVGA AMOLED Drived by Ultra Low Temperature Poly Silicon (ULTPS) TFT Direct Fabricated below 200°C

Abstract

Abstract We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly‐Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma — CVD. In order to reduce stress of plastic, organic film was coated as inter‐dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm 2 /Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.