2002 · 22 citations · 6 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ReliabilityDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityDrain DepthHigh-voltage BreakdownMosfet ModelingPower MosfetsRobustness
This work analyzes unclamped inductive switching (UIS) behavior of two types of 40 V resurf (reduced surface field) lateral diffused MOSFETs (RLDMOSFETs). It is shown that the addition of a deep buffer implant region on the drain side of the device increases the snap-back current limit as well as UIS robustness. It is also shown, using 2D simulation, that the failure current limit under UIS conditions is not the same as the current at which the parasitic BJT turns on.
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High voltage thin layer devices (RESURF devices)
J.A. Appels, H.M.J. Vaes · 1979 · 520 citations
An optimized RESURF LDMOS power device module compatible with advanced logic processes