IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications · 2001 · 27 citations · 6 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignLow-noise Circuit DesignNoise In Semiconductor DevicesSemiconductor DetectorsCharge-sensitive AmplifiersConversion GainLeakage Current CorrectionLow-power Cmos DesignReadout NoiseSemiconductor Radiation DetectorsSilicon DetectorsSilicon Semiconductor Detectors
A low-noise, low-power CMOS semiconductor on insulator (SOI) readout front-end aiming at dc coupling to silicon radiation detectors is presented in this paper. It is able to compensate the leakage current of detectors within a wide range up to 10 /spl mu/A. While the presented solution does not significantly deteriorate the amplifier noise performance it complies with demands for low-noise readout system for silicon detectors. This front-end system includes a charge-sensitive amplifier, a semi-Gaussian CR-RC shaping amplifier and an output buffer. It has been simulated and implemented in a CMOS SOI-SIMOX process. For no leakage current, an input referred equivalent noise charge (ENC) of 426 electrons (rms) for 0 pF of detector capacitance with a noise slope of 40 electrons/pF, a peaking time of 50 ns, and a conversion gain of 23.4 mV/fC have been obtained.
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