IEEE Journal of Selected Topics in Quantum Electronics · 1995 · 28 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsLaser DiodesOptical SourcesSemiconductor Device MaterialsSemiconductor LasersDevice FabricationLaguerre - Gaussian ModesLight-emitting DevicesMolecular Beam EpitaxyP-type DopingSemiconductor Laser DiodesThreshold VoltageVertical-cavity Surface-emitting Lasers
Efficient planar proton implanted InGaAs-GaAs MQW vertical-cavity surface-emitting laser diodes (VCSEL's) and 2-D arrays are fabricated using molecular beam epitaxy and p-type beryllium doping. Using single-step grading and modulation /spl delta/-doping in the p-type AlGaAs-GaAs Bragg reflectors top surface emitting devices with a maximum wall-plug efficiency of 17.6% and a threshold voltage of 1.8 V are demonstrated. Transverse mode behavior is well described in terms of Laguerre-Gaussian functions. Independently addressable 10/spl times/10 arrays of 12 /spl mu/m diameter VCSEL's exhibit electrical 3-dB modulation bandwidths up to 6 GHz. Light from the array is simultaneously launched into a 10/spl times/10 multimode fiber bundle with coupling efficiency above 70% applying a simple butt-coupling technique.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
11
Handbook of Mathematical Functions
Milton Abramowitz, I. A. Stegun · 1972 · 15.4K citations
Transverse mode control of vertical-cavity top-surface-emitting lasers
Robert Morgan, G. D. Guth, M. W. Focht et al. · IEEE Photonics Technology Letters · 1993 · 122 citations