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Planar proton implanted VCSEL's and fiber-coupled 2-D VCSEL arrays
28
Citations
11
References
1995
Year
Optical MaterialsEngineeringPlanar ProtonLaser ApplicationsOptoelectronic DevicesSurface-emitting LasersHigh-power LasersOptical AmplifierAdvanced Packaging (Semiconductors)Semiconductor LasersPhotonic Integrated CircuitPhotonicsElectrical EngineeringP-type Beryllium DopingTransverse Mode BehaviorMicroelectronicsPhotonic DeviceElectro-optics DeviceOptoelectronicsApplied PhysicsEfficient Planar ProtonOptical Devices
Efficient planar proton implanted InGaAs-GaAs MQW vertical-cavity surface-emitting laser diodes (VCSEL's) and 2-D arrays are fabricated using molecular beam epitaxy and p-type beryllium doping. Using single-step grading and modulation /spl delta/-doping in the p-type AlGaAs-GaAs Bragg reflectors top surface emitting devices with a maximum wall-plug efficiency of 17.6% and a threshold voltage of 1.8 V are demonstrated. Transverse mode behavior is well described in terms of Laguerre-Gaussian functions. Independently addressable 10/spl times/10 arrays of 12 /spl mu/m diameter VCSEL's exhibit electrical 3-dB modulation bandwidths up to 6 GHz. Light from the array is simultaneously launched into a 10/spl times/10 multimode fiber bundle with coupling efficiency above 70% applying a simple butt-coupling technique.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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