Publication | Open Access
Chiral symmetry breaking and the quantum Hall effect in monolayer graphene
55
Citations
49
References
2014
Year
Charge ExcitationsEngineeringSpin-charge ConversionMagnetic ResonanceChemistryStaneneMagnetismGraphene-based Nano-antennasQuantum MaterialsHall StatesChiral Symmetry BreakingMaterials ScienceQuantum ScienceSpin-orbit EffectsQuantum Hall EffectPhysicsActivation GapQuantum ChemistryCondensed Matter TheoryQuantum MagnetismSpintronicsMonolayer GrapheneNatural SciencesCondensed Matter PhysicsApplied PhysicsGrapheneGraphene Nanoribbon
Monolayer graphene in a strong magnetic field exhibits quantum Hall states at filling fractions $\ensuremath{\nu}=0$ and $\ensuremath{\nu}=\ifmmode\pm\else\textpm\fi{}1$ that are not explained within a picture of noninteracting electrons. We propose that these states arise from interaction-induced chiral symmetry-breaking orders. We argue that when the chemical potential is at the Dirac point, weak on-site repulsion supports an easy-plane antiferromagnet state, which simultaneously gives rise to ferromagnetism oriented parallel to the magnetic field direction, whereas for $|\ensuremath{\nu}|=1$ easy-axis antiferromagnet and charge-density-wave orders coexist. We perform self-consistent calculations of the magnetic field dependence of the activation gap for the $\ensuremath{\nu}=0$ and $|\ensuremath{\nu}|=1$ states and obtain excellent agreement with recent experimental results. Implications of our study for fractional Hall states in monolayer graphene are highlighted.
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