Aluminum Alloying in Local Contact Areas on Dielectrically Passivated Rear Surfaces of Silicon Solar Cells

Abstract

We present a detailed study on the rear contact formation of rear-surface-passivated silicon solar cells by full-area screen printing and alloying of aluminum pastes on the locally opened passivation layer. We demonstrate that applying conventional Al pastes exhibits two main problems: (1) high contact depths leading to an enlargement of the contact area and (2) low thicknesses of the Al-doped p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> Si regions in the contact points resulting in poor electron shielding. We show that this inadequate contact formation can be directly linked to the deficiently low percentage of silicon that dissolves into the Al-Si melt during alloying. Thus, by intentionally adding silicon to the Al paste, we could significantly improve the contact geometry by reducing the contact depth and enlarging the Al-p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> thickness in the contact points, enabling a simple industrially feasible way for the rear contact formation of silicon solar cells.