High voltage devices in advanced CMOS technologies

Abstract

CMOS technologies for mobile systems require integrated high voltage devices to address analog baseband and RF power applications. Technology and device architecture evolution, from 0.5 mum BCD-like to advanced 45 nm CMOS, on bulk and thin SOI substrates, are reviewed in this paper. Main challenges encountered when integrating these devices in advanced CMOS are explained. The influence of the gate oxide thickness on the relevant figures of merit and some considerations on performance-reliability trade-off are provided.